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UNISONIC TECHNOLOGIES CO., LTD BU406
SILICON NPN SWITCHING TRANSISTOR
DESCRIPTION
The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110 CRT.
NPN PLANAR TRANSISTOR
*Pb-free plating product number: BU406L
ORDERING INFORMATION
Order Number Normal Lead Free Plating BU406-x-TA3-T BU406L-x-TA3-T BU406-x-TF3-T BU406L-x-TF3-T BU406-X-T3P-T BU406L-x-T3P-T Package TO-220 TO-220F TO-3P Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tube
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATING
NPN PLANAR TRANSISTOR
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE=0) VCBO 400 V Collector-Emitter Voltage (VBE=-1.5V) VCEV 400 V Collector-Emitter Voltage (IB=0) VCEO 200 V Emitter-Base Voltage (IC=0) VEBO 6 V Collector Current IC 7 A Collector Peak Current (repetitive) ICM 10 A Collector Peak Current (tp=10ms) ICM 15 A Base Current IB 4 A Collector Dissipation (TC25 ) PC 60 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL JA JC RATINGS 70 2.08 UNIT /W /W
ELECTRICAL CHARACTERISTICS (Ta=25 )
PARAMETER Collect Cutoff Current (VBE=0) SYMBOL ICES TEST CONDITIONS VCE=400V VCE=250V TC=150C VCE=250V VBE=6V IC=5A, IB=0.5A IC=5A, IB=0.5A VCE=10V, IC=500mA IC=500mA, VCE=10V IC=5A, IB=0.5A VCE=40V, t=10ms MIN TYP MAX 5 100 1 1 1 1.2 240 0.75 4 UNIT mA A mA mA V V MHz s A
Emitter Cut-off Current (IC=0) IEBO Collector-Emitter Saturation Voltage VCE(SAT)* Base-Emitter Saturation Voltage VBE(SAT)* DC Current Gain hFE Transition Frequency fT Turn-off Time tOFF Second Breakdown Collector Current Is/b Pulse duration=300s, duty cycle 1.5%
70 10
CLASSIFICATION OF hFE
RANK RANGE A 70 ~ 120 B 110 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN PLANAR TRANSISTOR
Saturation Voltage, VCE(SAT) (V), VBE(SAT) (V)
10000
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC = 10IB VBE(SAT)
Capacitance, Cob (pF)
Collector Output Capacitance 1000 f = 1MHz
1000
100
100 VCE(SAT)
10
10
0
1000 100 10 Collector Current, IC (mA)
10000
1
1
10 Collector-Base Voltage, VCB (V)
100
Safe Operating Area 80 70 10
IC Max. (Pulsed) IC Max. (Continuous)
ss Di
Power Derating
Power Dissipation, PC (W)
Collector Current, IC (A)
60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200
s 1m ms 10 s 0m ited 10 m Li n io at ip
TO-220
1
0.1 1
10
100
Collector-Base Voltage, VCE (V)
VCE MAX.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
bL S/ im ite d
Case Temperature, TC (C)
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NPN PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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